Submicron three-dimensional infrared GaAsÕAlxOy-based photonic crystal using single-step epitaxial growth
نویسندگان
چکیده
A relatively simple technique is demonstrated to fabricate three-dimensional face-centered-cubic infrared photonic crystals with submicron feature sizes using GaAs-based technology, single-step epitaxial growth, and lateral wet oxidation. The photonic crystals were fabricated with feature sizes ~a! of 1.5 and 0.5 mm. Transmission measurements reveal a stopband centered at 1.0 mm with a maximum attenuation of 10 dB for the submicron (a50.5 mm) photonic crystal. This technique is scalable to small photonic crystal periodicity and hence to shorter wavelengths. © 2001 American Institute of Physics. @DOI: 10.1063/1.1372198#
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